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射频反应溅射Si_3N_4薄膜的光学和电学性质,与制备条件有密切的关系.对Si_3n_4膜的折射率、红外吸收带、相对介电常数、淀积速率和腐蚀速度随溅射电压和混合气体(Ar和N_2)组份的变化规律作了研究.指出,在最佳溅射条件下的电场作用和电子、负离子对硅器件表面SiO_2层的轰击造成的热作用,有利于加速Si_3N_4膜对存在于SiO_2层中的Na~+的吸取和捕集过程,使硅器件的光学特性和稳定性获得显著的改善.而且,由于淀积时的基片表面温度低,可以利用常用的光刻胶掩蔽,进行定域淀积,简化了Si_3N_4膜的光刻腐蚀工艺.
The optical and electrical properties of Si_3N_4 films deposited by RF reactive sputtering are closely related to the fabrication conditions.The refractive index, infrared absorption band, relative permittivity, deposition rate and corrosion rate of Si_3n_4 films vary with sputtering voltage and gas mixture Ar and N_2) were studied.The results show that the electric field and the thermal effects of electrons and anions on the SiO 2 layer on the surface of silicon devices are favorable for accelerating the deposition of Si 3 N 4 films on the The absorption and trapping of Na + in the SiO 2 layer can significantly improve the optical properties and the stability of the silicon device, and because the substrate surface temperature during deposition is low, it can be masked by the commonly used photoresist, For localized deposition, Si3N4 film to simplify the lithography etching process.