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The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well (QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fcn and hole (1-fvUm) and the approximately equal transverse electric (TE) polarization optical matrix elements (|Mx|2) for the c1-v1 transition.As a result,the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45％-53.84％ as compared to that of the conventional A1GaN QW structure.In addition,the type-Ⅱ QW structure with x ～ 0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23.It can be attributed to the combined effect of |Mx|2 and fcn(1-fvUm) for the c1-v1,c1-v2,and c1-v3 transitions.