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一、引言 目前在半导体激光器的研制中,p型材料的欧姆接触系统,对GaAs多采用Cr/Au、Zn/Au,对InP多采用Au/Zn。它们有一个共同点,就是要在适当条件下进行合金以便得到最佳的效果。为了避免合金,同时得到具有很高稳定性的欧姆接触,我们采用溅射Ti、Pt薄膜的方法,对p-GaAs和p-InP的欧姆接触进行了研究。为了验证该欧姆接触的热稳定性,我们在不同的条件下进行了所谓的“合金”处理。所得结果表明,在很宽的温度范围内,该欧姆接触具有很高的热稳定性。另外,Ti和Pt本身又具有很高的化学稳定性,因此可以预料,这种欧姆接触在减缓半导体激光器的慢退化当中可能起积极的作用。
I. INTRODUCTION Currently, in the development of semiconductor lasers, the ohmic contact system of p-type material uses more Cr / Au, Zn / Au for GaAs and more Au / Zn for InP. One thing they all have in common is that they should be alloyed under the proper conditions for the best results. In order to avoid the alloy and get the ohmic contact with high stability at the same time, the ohmic contact between p-GaAs and p-InP was investigated by sputtering Ti and Pt films. In order to verify the thermal stability of this ohmic contact, we performed the so-called “alloying” treatment under different conditions. The results show that the ohmic contact has very high thermal stability over a wide temperature range. In addition, Ti and Pt themselves have very high chemical stability, so it is expected that this ohmic contact may play a positive role in slowing the slow degradation of semiconductor lasers.