论文部分内容阅读
a-Si能带中隙态密度的分布N(ε),是决定a-Si输运性质的一项重要参数.它的测量不仅为工艺条件的比较和检验,而且为材料结构和光学、电学性质的解释提供了重要依据.作者采用场效应方法,测量了辉光放电生长的a-Si薄膜的隙态密度.
The distribution of the gap density in the a-Si band, N (ε), is an important parameter that determines the transport properties of a-Si. The measurement is not only for the comparison and examination of process conditions but also for the material structure and optics, The nature of the interpretation provides an important basis.The author uses the field effect method to measure the glow discharge growth of a-Si film gap density.