论文部分内容阅读
本文用六方氮化硼和石墨靶材采用射频(频率为13.56 MHz)磁控溅射法沉积硼碳氮薄膜,得到的硼碳氮薄膜可用红外,拉曼表征。工作气压从0.2 Pa升高到6.0 Pa。我们可以观察到工作气压可以明显的改变硼碳氮薄膜的晶体结构和结晶度。硼碳氮薄膜的半高宽随工作气压的增加而变化并且在工作气压1.0 Pa时得到较好结晶度的薄膜。
Boron carbonitride films were deposited by RF magnetron sputtering at a frequency of 13.56 MHz using hexagonal boron nitride and graphite targets. The obtained boron carbonitride films were characterized by IR and Raman spectroscopy. Working pressure increased from 0.2 Pa to 6.0 Pa. We can observe that the working pressure can obviously change the crystal structure and crystallinity of Boron carbonitride films. The full width at half maximum of boron carbonitride film changes with the increase of working pressure, and the film with better crystallinity is obtained at working pressure of 1.0 Pa.