论文部分内容阅读
用一种新的方法制作出应用于光网络系统的电吸收调制器 ,应用应变 In Ga As/In Al As材料做多量子阱 ,实验测量的调制器调制性能显示出器件的偏振不相关性 ,以及其高消光比 (>40 d B)和低电容 (<0 .5 p F) ,保证了器件可以应用于高速率的传输系统 (>10 GHz)
A new method is used to fabricate an electroabsorption modulator for optical network system. The strain In Ga As / In Al As material is used as a multi-quantum well. The experimentally measured modulator modulation performance shows the polarization irrelevance of the device, Its high extinction ratio (> 40 d B) and low capacitance (<0.5 pF) ensure that the device can be used in high-speed transmission systems (> 10 GHz)