南京电子器件研究所研制成功工作频率３．１～３．４ＧＨｚ，脉冲宽度３００μｓ，占空比１０％，输出功率大于５０Ｗ，功率增益大于７ｄＢ，效率大于４０％的硅脉冲功率晶体管。该器件在脉冲宽度为１００μｓ时输出功率大于６０Ｗ。器件的输出功率、增益和效率等特性所能达到 Nanjing Institute of Electronic Devices successfully developed silicon pulse power transistor with working frequency of 3.1 ~ 3.4GHz, pulse width of 300μs, duty cycle of 10%, output power greater than 50W, power gain greater than 7dB, and efficiency greater than 40%. The device output power is greater than 60W at a pulse width of 100μs. Device output power, gain and efficiency characteristics can be achieved