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A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been developed.The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required performances.The 0.5 × 5 μm~2 InP DHBTs demonstrated f_t = 350 GHz,f_(max) = 532 GHz and BV_(CEO) = 4.8 V,which were modeled using Agilent-IIBT large signal model.As a benchmark circuit,a dynamic frequency divider operating from 110 to 220 GHz has been designed,fabricated and measured with this technology.The ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage,which makes it an ideal candidate for next generation 100 GHz+ mixed signal integrated circuits.
A high performance 3 inch 0.5 μm InP DHBT technology with three interconnecting layers has been developed. The epitaxial layer structure and geometry parameters of the device were carefully studied to get the required performances.The 0.5 × 5 μm ~ 2 InP DHBTs demonstrated f_t = 350 GHz, f max = 532 GHz and BV_ (CEO) = 4.8 V, which were modeled using Agilent-IIBT large signal model. As a benchmark circuit, a dynamic frequency divider operating from 110 to 220 GHz has been designed, fabricated and measured with this technology. The ultra-high-speed 0.5 μm InP DHBT technology offers a combination of ultra-high-speed and high breakdown voltage, which makes it an ideal candidate for next generation 100 GHz + mixed signal integrated circuits.