研究了６３２．８ｎｍ波长下适用的相变光盘介质Ｇｅ２Ｓｂ２Ｔｅ５薄膜的制备方法和静态光存诸记录特性，发现该薄膜可在１００ｎｓ条件下实现直接重写，在优化膜层结构后，写擦循环次数高达１０６，反射率对比度在１５％以上 The preparation method of Ge2Sb2Te5 film and the static light storage properties of the phase-change optical disk medium suitable for 632.8nm wavelength were studied. It was found that the film could be directly rewritten under the condition of 100ns. After optimizing the structure of the film layer, Up to 106, reflectance contrast at 15%