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研究了 Si~+和 S~+注入 SI-GaAs 经白光瞬态退火后的电特性,得出最佳的退火条件为930～960℃,5s.在适当的注入和退火条件下,得到了陡峭的载流子剖面分布没有拖长的尾巴.发现Si~+注入白光快速退火样品比常规热退火样品有较好的电特性.使用 Si~+注入白光快速退火制作出了性能良好的全离子注入平面型 MESFET.
The electrical properties of Si-+ and S ~ + implanted SI-GaAs after white light transient annealing were studied. The optimum annealing conditions were 930 ~ 960 ℃ for 5 s. Under appropriate implantation and annealing conditions, the steep Of the cross-sectional distribution of carriers without prolonged tail found that Si ~ + injection of white rapid-annealed samples have better electrical properties than the conventional thermal annealed samples using Si ~ + injection rapid white annealed to prepare a good performance of the whole ion implantation Planar MESFET.