GaAs中子嬗变掺杂可得到均匀分布的掺杂剂,对制备大功率高速电子器件有特殊意义。在热中子作用下,GaAs嬗变为稳定的Ge和Se在晶体作为施主杂质,但在辐照过程同时晶格原子受高能粒子反冲引起级联碰撞致使晶体结构造成严重辐射损伤,当 GaAs neutron transmutation doping can be uniform distribution of dopants, for the preparation of high-power high-speed electronic devices have special significance. Under the action of thermal neutrons, GaAs transforms into stable Ge and Se in the crystal as the donor impurity, but in the irradiation process, the lattice atoms are collided by the recoil of the high-energy particles to cause serious radiation damage to the crystal structure.