InSb多元器件的制作较复杂,其中某些关键工艺对器件的性能,成品率及可靠性影响极大。为了找到一种适用于InSb多元器件制作的较理想的工艺流程,本文对这些关键工艺进行了一系列的研究和分析,获得了满意的结果。扩散工艺即成结是制作多元器件的重要一步,扩散结的好坏,均匀性、结深选择是否适当,对器件的特性有决定性影响。器件的量子效率,光电流和反向饱和电流与结深有直接的 InSb multi-component production is more complex, some of which key processes on the device performance, yield and reliability of great influence. In order to find an ideal process for the production of InSb multi-component devices, this paper conducted a series of research and analysis on these key processes and obtained satisfactory results. The diffusion process is the end result is an important step in the production of multiple devices, diffusion junction is good or bad, uniformity, junction selection is appropriate, the device has a decisive influence on the characteristics. The device’s quantum efficiency, photocurrent and reverse saturation current and junction depth are direct