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本文报导了寿命不少于10~4小时的ZnSe发光二极管的制备,而早先的ZnSe肖特基二极管苦于在工作几十小时后就衰减了。发光二极管的老化取串联电阻连续增加的形式,在开始的10~3小时内,这个电阻随时间成对数地增加,以后随时间的平方根而增加。这种改变与电流促进肖特基接触下面绝缘层的生长相一致。起始的增长率可能受控于在消除应力的裂缝处先发生氧化的过程,而后的增长率表征了穿过这种绝缘层的输运所发生的氧化过程。两种过程都可以被控制:在制备肖特基接触层之前附加一已知的绝缘层,以封闭任何可能产生的裂缝;用有效的环氧树脂密封。
This article reports the preparation of a ZnSe LED with a lifetime of at least 10 to 4 hours, whereas the earlier ZnSe Schottky diodes suffer from decay after decades of operation. The aging of the LEDs takes the form of a series resistance increase continuously. In the first 10 to 3 hours, the resistance increases logarithmically with time and increases with the square root of time later. This change is consistent with the current promoting the growth of the insulating layer under Schottky contact. The initial growth rate may be governed by the first oxidation occurring at the stress-relieved crack, and the subsequent growth rate characterizes the oxidation process that takes place through the transport of this insulation. Both processes can be controlled by attaching a known insulating layer prior to the Schottky contact layer to seal any cracks that may occur; sealing with an effective epoxy.