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非极性方向生长的ZnO基多量子阱消除了量子限域Stark效应,可以提高光电器件的发光效率.据此我们采用脉冲激光沉积方法在r面蓝宝石衬底上生长了高质量的α面(11(?)0)单一取向非极性Zn(Mn,Na)O薄膜.X射线衍射、场发射扫描电子显微镜、Hall测试、X射线光电子能谱等测试结果表明:衬底温度和生长气压对Zn(Mn,Na)O薄膜的非极性生长影响很大,在600℃和0.02 Pa条件下实现了Mn-Na共掺,得到了高结晶质量并具有良好光电性能的非极性Zn(Mn,Na)O薄膜.此外,我们还利用超导量子干涉仪研究了Zn(Mn,Na)O薄膜的生长取向对其室温铁磁性能的影响规律,并对引起磁性变化的机理进行了讨论.
The ZnO-based MQWs grown in non-polar directions eliminate the Stark effect of quantum confinement and improve the luminescence efficiency of photovoltaic devices. Based on this, we use pulsed laser deposition to grow high quality α-facets on r-plane sapphire substrates The results of X-ray diffraction, field emission scanning electron microscopy, Hall test and X-ray photoelectron spectroscopy show that the substrate temperature and the growth pressure The non-polar growth of Zn (Mn, Na) O thin films has great influence on Mn-Na codoped at 600 ℃ and 0.02 Pa, and the nonpolar Zn (Mn , Na) O films.In addition, we also study the influence of growth orientation of Zn (Mn, Na) O thin films on their room temperature ferromagnetism properties by means of superconducting quantum interferometer, and discuss the mechanism of magnetic change.