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使用MOCVD技术生长GaAs,结果表明,纯度GaAs中起支配作用的电活性杂质是C和Si。综合C和Si的作用,建立了简单的热力学模型,得到As/Ga比对载流子类型和浓度影响的解析表达式,并且与实验结果符合得很好。生长的GaAs外延层室温载流子浓度为9×10~(14)cm~(-3),迁移率为5100cm~2/V·s。
The growth of GaAs using MOCVD techniques showed that the electroactive impurities that dominate pure GaAs are C and Si. A simple thermodynamic model was established based on the effect of C and Si. The analytical expression of the effect of As / Ga ratio on carrier type and concentration was obtained, which was in good agreement with the experimental results. The carrier concentration of GaAs epitaxial layer grown at room temperature is 9 × 10 ~ (14) cm ~ (-3) and the mobility is 5100cm ~ 2 / V · s.