利用ＭＢＥ方法在（００１）ＧａＡｓ衬底上生长了多层竖直自对准ＩｎＡｓ量子点结构．透射电子显微镜的观察表明，多层量子点成一系列柱状分布．同单层量子点相比，多层量子点的光荧光谱线发生红移．这表明由于量子点中载流子波函数的扩展和交迭，柱中量子点之间有耦合现象发生．光荧光谱线半高宽随温度的反常变化说明载流子还会在邻近柱中隧穿 Multilayer vertical self-aligned InAs quantum dot structures are grown on (001) GaAs substrate by MBE method. Transmission electron microscopy observation shows that the multi-layer quantum dots into a series of columnar distribution. Compared with single-layer quantum dots, multi-layer quantum dots of the fluorescence spectrum redshift. This indicates that due to the expansion and overlap of the carrier wave function in the quantum dot, a coupling phenomenon occurs between the quantum dots in the column. The abnormal change of FWHM with temperature indicates that carriers will also tunnel in adjacent columns