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上海制笔零件修配厂和上海电动工具研究所,实行厂、所结合,自行设计,研制成功了全晶体管化JB—1226型硅单晶寿命测试仪。其性能良好。与日本同类产品LM1A型测试仪相比,体积仅为它的五分之一。该测试仪采用高频光电导衰减法,其原理和长城电工仪器厂生产的SG—1型硅单晶少数载流子寿命测试仪相同,详见本刊71年6期,这里不再赘述。与SG—1型测试仪相比不同之处在于: 1、全晶体管电路(SG—1为晶体管、电子管混合电路); 2、测量范围下限指标优于SG—1型; 3、体积小、重量轻。该仪器实际使用时照片如图1。为便于有关单位了解本仪器性能特点,现把该仪器的原理线路图、技术指标和元件参数附后,供参考。
Shanghai Pen Parts Parts Factory and the Shanghai Electric Power Tool Institute, the implementation of the plant, the combination of their own design, developed a fully-transistorized JB-1226-type silicon single-crystal life tester. Its performance is good. Compared with similar products in Japan LM1A tester, the volume is only one-fifth of it. The tester uses high-frequency photoconductive attenuation method, the principle and the Great Wall Electrical Instrument Factory production of SG-1 silicon single crystal minority carrier life tester the same, see Journal 71 6, will not repeat them here. Compared with SG-1 Tester: 1, All-transistor circuit (SG-1 is a transistor and tube hybrid circuit); 2, The lower limit of the measurement range is better than SG-1; 3, Small size and weight light. The actual use of the instrument photos shown in Figure 1. In order to facilitate the relevant units to understand the performance characteristics of the instrument, now the principle of the instrument circuit diagram, technical indicators and component parameters are attached for reference.