传统的光学编码器往往配有全反射镜、分光器(部分反射镜)和块状透镜等。日本电信电话公司的泽田廉士试制开发的微型光学编码器,则省去了这些元件及其组装过程。它是用图示方法使U型半导体激光器与微型膜状透镜连为一体的,且膜状透镜为折射率变化的三层式结构,其工艺为:在真空室中,将离子束照射在透镜原材料(冲击板)上,被冲打出来的分子便附着在半导体基板上。其顺序为;离子束先照射在折射率低的SiO_2冲击板上,于是,在半导体基板上先形成SiO_2层膜;然后,移动冲击板,使离子束照射在折射率高的Si-O-N上,于是在基板表层已有的SiQ_2层膜上又覆盖了一层折射率高的材料;最后,再将冲击板移回原位,这样,在最外层又形成SiO_2层膜,从而获得折射率在厚度方向有变化且对称分布的 Traditional optical encoders are often equipped with total reflection mirror, splitter (partial mirror) and block lenses. Nihon Teikzeki of Nippon Telegraph and Telephone Corporation developed a miniature optical encoder, eliminating the need for these components and their assembly process. It is a graphical method to make the U-shaped semiconductor laser and the micro-film lens as a whole, and the film-shaped lens refractive index changes in the three-tier structure, its process is: in the vacuum chamber, the ion beam is irradiated on the lens The raw material (impact plate), punched out of molecules will be attached to the semiconductor substrate. The order is: the ion beam is firstly irradiated on a SiO 2 impact plate with a low refractive index so that a SiO 2 layer film is firstly formed on the semiconductor substrate; then, the impact plate is moved to irradiate the ion beam on the Si-ON with a high refractive index, So the existing SiQ_2 layer on the substrate surface layer is covered by a layer of high refractive index material; Finally, the impact plate and then moved back to its original position, so that in the outermost layer and the formation of SiO_2 film, resulting in refractive index at There are changes in the thickness direction and the symmetrical distribution