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试验了用柠檬酸与双氧水系列腐蚀液来实现ＩｎＡｌ（Ｇａ）Ａｓ∶ＩｎＰ和ＩｎＧａＡｓ∶ＩｎＡｌＡｓ的选择腐蚀，达到了较好的效果，且工艺重复性好。同一单片上ＭＳＭ（金属－半导体－金属）光探测器的光响应度可达到０．５Ａ／Ｗ，ＨＥＭＴ器件最大跨导为３０５ｍＳ／ｍｍ，最大饱和电流密度为３５０ｍＡ／ｍｍ。完成了实现ＯＥＩＣ光接收机的关键一步。
The selective etching of InAl (Ga) As: InP and InGaAs: InAlAs was achieved by using citric acid and hydrogen peroxide series of etchants, which achieved good results and good process repeatability. The same monolithic MSM (Metal-Semiconductor-Metal) photodetector has a responsivity of 0.5 A / W, a maximum HEMT device transconductance of 305 mS / mm and a maximum saturation current density of 350 mA / mm. Completed a key step toward implementing OEIC optical receivers.