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提出了一种直接热氧化电子束蒸发Ti薄膜生成TiO2绝缘栅的方法,制备出了Metal-TiO2-AlGaN/GaN结构。XRD分析表明氧化温度高于400℃时制备出的TiO2薄膜为金红石结构。分析了不同的Ti热氧化条件及不同的退火工艺对于MIS结构的漏电流影响。经过工艺优化制备出的MIS结构漏电流密度可低至10-7A/cm2数量级,击穿电压约为300V。实验数据表明,这种热氧化生成TiO2绝缘栅的制备工艺简单、成本低,抑制栅漏电效果显著,有望应用于AlGaN/GaN基HEMT器件制备工艺中。
A method of direct thermal oxidation of electron beam to evaporate Ti thin film to form TiO2 insulated gate was proposed and a Metal-TiO2-AlGaN / GaN structure was prepared. XRD analysis shows that the TiO2 film prepared at the oxidation temperature higher than 400 ℃ has rutile structure. The effects of different Ti thermal oxidation conditions and different annealing processes on MIS structure leakage current were analyzed. The leakage current density of the MIS structure prepared through the process optimization can be as low as 10-7 A / cm2 and the breakdown voltage is about 300V. Experimental data show that the thermal oxidation of TiO2 gate dielectric preparation process is simple, low cost, significant inhibition of gate leakage effect, is expected to be applied to AlGaN / GaN-based HEMT device manufacturing process.