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本文报道了射频溅射制备的α—Si:F膜对硼的气相掺杂与气体流速量、靶的类型等因素的关系;离子注入对①已掺入硼的α—Si:F膜②未掺杂的α—Si:F膜③在纯Ar气氛中溅射的α—Si膜④辉光放电制备的α—Si:H膜电阻率的影响;报道了退火对掺杂膜电阻率的影响;对各种现象的物理机制作了简单的分析。
In this paper, the relationship between the gas phase doping and the gas flow rate, the target type and other factors of α-Si: F films prepared by radio frequency sputtering has been reported. Doped α-Si: F film ③ sputtered α-Si film in a pure Ar atmosphere ④ influence of the resistivity of the α-Si: H film prepared by glow discharge; and the influence of annealing on the resistivity of the doped film ; The physical mechanism of various phenomena made a simple analysis.