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半导体表面层内存在高复合中心时,zcrbst公式需要加以修正.经修正后的公式表明,Zerbst图是非线性的,利用它可同时决定表面层内少子寿命、体内少子寿命及高复合表面层的大致深度.实验结果与理论得到了很好的吻合.
The zcrbst formula needs to be corrected when there is a high recombination center in the semiconductor surface layer.The modified formula shows that the Zerbst graph is non-linear and can be used to determine the lifetime of the minority carriers in the surface layer, the lifetime of the minority carriers in the body and the high composite surface layer Depth.The experimental results are in good agreement with the theory.