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利用脉冲激光沉积(PLD)分别在Si片和多孔Si衬底上沉积了ZnS薄膜,考察衬底对ZnS薄膜结构和发光性能的影响。X射线衍射(XRD)和扫描电镜(SEM)测量表明,两种衬底上制备的ZnS薄膜均沿立方相结构β-ZnS(111)晶向择优取向生长。多孔Si衬底上生长的ZnS薄膜表面有很多凹坑,而Si衬底上生长的ZnS薄膜表面相对比较平整。光致发光(PL)谱显示,ZnS薄膜沉积后,多孔Si的发光峰强度减小且峰位发生蓝移。根据ZnS薄膜具有较高透射率的特点,把透射出ZnS的多孔Si的橙红光和ZnS的发光叠加,多孔Si/ZnS纳米薄膜复合体系在可见光区有很强的PL现象。
ZnS thin films were deposited on Si wafer and porous Si substrate respectively by pulsed laser deposition (PLD) to investigate the effect of substrate on the structure and luminescent properties of ZnS thin films. X-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements show that the ZnS thin films grown on the two substrates all grow along the β-ZnS (111) crystal orientation of the cubic phase. The surface of ZnS film grown on porous Si substrate has many pits, while the surface of ZnS film grown on Si substrate is relatively flat. Photoluminescence (PL) spectra show that the luminescence peak intensity of porous Si decreases and the blue shift occurs at the peak position after ZnS thin film deposition. According to the high transmissivity of ZnS film, the porous Si / ZnS nanostructured composite system has a strong PL phenomenon in visible light region.