Northrop Grumman公司采用磷化铟高电子迁移率晶体管制成10级放大器,在太赫兹频率下,可获得9dB增益。美国Northrop Grumman称,首次直接展示磷化铟高电子迁移率晶体管在太赫兹频率下的增益。通常情况下,在太赫兹频率条件下的性能是由低频条件下的测量结果推断出来的。该研究团队基于此技术开发了一个10级放大器电路。Northrop Grumman宇航研究局在过去的20年一直致力于开发高频晶体 Northrop Grumman, Inc. uses indium phosphide-based high electron mobility transistors to form a 10-stage amplifier that delivers 9dB of gain at terahertz frequencies. For the first time, Northrop Grumman of the United States said it directly shows the gain of an indium phosphide high electron mobility transistor at terahertz frequencies. In general, the behavior at terahertz frequencies is inferred from the measurements at low frequencies. The research team developed a 10-stage amplifier circuit based on this technique. Northrop Grumman NASA has been working on the development of high-frequency crystals for the past two decades