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采用真空蒸镀法在n型Hg3In2Te6(简称MIT)表面制备了Au和In金属电极,探讨了MIT晶片的化学抛光工艺对其表面成分偏析和Au/MIT接触特性的影响规律与机制,优化了MIT晶体的化学抛光工艺参数。结果表明,MIT晶片采用5%Br2-C3H7ON溶液化学抛光2 min后,MIT晶片表面元素组分更接近标准计量比,所制备出的Au/MIT接触的反向漏电流最小。
The Au and In metal electrodes were prepared by vacuum evaporation on the surface of n-type Hg3In2Te6 (MIT). The rules and mechanism of chemical composition of MIT wafer on the surface composition segregation and Au / MIT contact characteristics were discussed. The MIT Crystal chemical polishing process parameters. The results show that the elemental composition of MIT wafers closer to the standard metrology ratio after 2 min chemical polishing with 5% Br2-C3H7ON solution, and the reverse leakage current of the prepared Au / MIT contacts is the smallest.