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最新Flex系统提供业界首创的电介质原子层刻蚀(ALE)生产工艺并已应用于量产。半导体设备制造商泛林集团公司推出了基于Flex电介质刻蚀系统的原子层刻蚀(ALE)技术,从而进一步扩大了其旗下的ALE产品家族。得益于泛林集团先进的混合模式脉冲(AMMP)技术,新型ALE工艺可在原子层面进行控制,以应对逻辑器件尺寸缩小至10nm及以下技术节点所面临的关键挑战。最新的Flex系统在业界率先使用等离子体增强的ALE技术进行电介质膜刻蚀,并已被用作逻辑器件大批量生产的标配设备。
The latest Flex system offers industry-first dielectric Atomic Layer Etch (ALE) production processes and has been used in mass production. Pan Lam Group, a maker of semiconductor equipment, introduced Atomic Layer Etch (ALE) technology based on the Flex dielectric etch system to further expand its ALE product family. Thanks to Pan-Lin Group’s Advanced Hybrid Mode Impulse (AMMP) technology, the new ALE process can be controlled at the atomic level to meet the key challenges faced by technology nodes with logic sizes down to 10nm and below. The latest Flex system pioneered dielectric plasma etching using plasma enhanced ALE technology and has been used as a standard device for mass production of logic devices.