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采用真空蒸镀法制备了结构为ITO/NPB(20nm)/CBP(3nm)/CBP∶Ir(piq)3(z%,xnm)/TPBi(10nm)/Alq3(20nm)/Cs2CO3∶Ag2O(2nm,20%)/Al(100nm)的器件。研究了掺杂浓度和厚度对器件性能的影响。首先选定Ir(piq)3∶CBP层的厚度为5nm,调节掺杂浓度。结果是当掺杂浓度为10%时,器件的效率和亮度较好;驱动电压为16V时,最大亮度为8 810cd/m2。然后在10%的掺杂浓度下,调节CBP∶Ir(piq)3层的厚度。当厚度为20nm时,器件的性能较好。驱动电压为12V时,电流密度为193mA/cm2,效率为11.92cd/A;驱动电压为19V时,电流密度为302.45mA/cm2,亮度为10 990cd/m2。无论在何种浓度和厚度下,器件的色坐标都在红光范围内。
The structure of ITO / NPB (20nm) / CBP (3nm) / CBP:Ir (piq) 3 (z%, xnm) / TPBi (10nm) / Alq3 (20nm) / Cs2CO3: Ag2O (2nm , 20%) / Al (100 nm). The effects of doping concentration and thickness on the device performance were studied. First select Ir (piq) 3: 3CBP layer thickness of 5nm, adjust the doping concentration. The result is that when the doping concentration is 10%, the efficiency and brightness of the device are better; when the driving voltage is 16V, the maximum brightness is 8 810 cd / m2. The thickness of the CBP: Ir (piq) 3 layer was then adjusted at a 10% doping concentration. When the thickness of 20nm, the device’s performance is better. When the driving voltage is 12V, the current density is 193mA / cm2 and the efficiency is 11.92cd / A. When the driving voltage is 19V, the current density is 302.45mA / cm2 and the brightness is 10 990cd / m2. The device’s color coordinates are in the red range regardless of concentration and thickness.