论文部分内容阅读
在高频直拉单晶炉中,适当增加石英坩埚的高度,并在坩埚外附加一个石英套管,使之形成一个较为合理的热场。在这个新的热场中已拉制出直径为20～30毫米的低位错密度的Insb单晶。其位错密度接近于10~2厘米~(-2)。从而使InSb单晶的位错密度比原先制备的至少下降一个数量级以上。结合直拉单晶工艺和缩颈技术,对排除和降低位错的措施进行较为详细的实验研究,并就两种热场拉制的InSb单晶进行了位错对比分析和讨论。同时,观察到籽晶与熔体接触面因热冲击而新生的位错,其密度约为3×10~2厘米~(-2)。
In the high-frequency Czochralski single crystal furnace, the quartz crucible is properly increased in height, and a quartz sleeve is added outside the crucible to form a more reasonable thermal field. Insb single crystals with a low dislocation density of 20-30 mm in diameter have been drawn in this new thermal field. The dislocation density is close to 10 ~ 2 cm ~ (-2). So that the dislocation density of InSb single crystal is reduced by at least an order of magnitude compared with the original one. Combined with the Czochralski (CZ) single crystal and necking technique, more detailed experimental studies on the measures to eliminate and reduce dislocations were carried out. Dislocations comparison analysis and discussion on two kinds of InSb single crystals were carried out. At the same time, new dislocations of the interface between the seed crystal and the melt due to thermal shock were observed, with a density of about 3 × 10 -2 cm -2.