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宽带Ⅱ－Ⅵ族半导体材料中，铍（Ｂｅ）的硫属化物如ＢｅＴｅ、ＢｅＳｅ 和ＢｅＳ与ＺｎＳｅ、ＺｎＳ和ＺｎＴｅ等相比，有较强的共价键性（晶格硬度增大）和大的堆垛层错能，而且与ＧａＡｓ 有好的晶格匹配。因此认为ＺｎＳｅ 基半导体材料中加入Ｂｅ对ＺｎＳｅ蓝绿激光二极管寿命将有明显改善。本文介绍近几年这方面的研究成果和发展动态
In wideband II-VI semiconductor materials, chalcogenides of beryllium (Be) such as BeTe, BeSe and BeS have stronger covalent bonding properties (larger lattice hardness) and larger sizes than large ones of ZnSe, ZnS and ZnTe Stacking faults, and good lattice matching with GaAs. Therefore, it is considered that the addition of Be to the ZnSe based semiconductor material has a significant improvement on the lifetime of the ZnSe blue-green laser diode. This article describes the research results and developments in this area in recent years