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本文通过数值模拟研究了H形栅SOI NMOS器件在总剂量条件下的单粒子效应.首先通过分析仿真程序中影响迁移率的物理模型,发现通过修改了的由于表面散射造成迁移率退化的Lombardi模型,仿真的SOI晶体管转移特性和实测数据非常符合.然后使用该模型,仿真研究了处于截止态(VD=5 V)的H形栅SOI NMOS器件在总剂量条件下的单粒子效应.结果表明:随着总剂量水平的增加,器件在同等条件的重离子注入下,产生的最大漏极电流脉冲只是稍有增大,但是漏极收集电荷随总剂量水平大幅增加.
In this paper, we study the single-particle effect of H-gate SOI NMOS devices under total dose by numerical simulation.Firstly, by analyzing the physical model that affects the mobility in the simulation program, we find that the modified Lombardi model with mobility degradation due to surface scattering , The simulated SOI transistor transfer characteristics are in good agreement with the measured data.Then the model was used to simulate the single-particle effect of the H-gate SOI NMOS device in the cutoff state (VD = 5 V) under the total dose condition.The results show that: With the increase of the total dose level, the maximum drain current pulse generated by the device under the same conditions of heavy ion implantation is only slightly increased, but the drain collection charge greatly increases with the total dose level.