本专利是关于红外摄象装置等所需的列阵红外探测器的制造方法。特别是把许多微小面积的光伏型器件以微小间隔排成列阵的红外探测器的制造方法。该方法的特点是:在具有电子导电性的InSb衬底的表面上形成薄薄的阳极氧化薄膜和厚厚的绝缘薄膜。然后,去掉阳极氧化薄膜和绝缘薄膜的一部份,使该处的InSb衬底露出来。在这个露出来的InSb衬底上粘附一层具有空穴 This patent relates to a method of fabricating an array of infrared detectors required for an infrared camera or the like. In particular, a method of manufacturing an infrared detector in which many photovoltaic devices having a small area are arrayed at minute intervals. The method is characterized in that a thin anodized film and a thick insulating film are formed on the surface of an InSb substrate having electron conductivity. Then, a part of the anodized film and the insulating film is removed to expose the InSb substrate there. There is a hole on the exposed InSb substrate with a layer of adhesive