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Superior characteristics of Al Ga N-channel metal-insulator-semiconductor(MIS) high electron mobility transistors(HEMTs) at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃.
Superior characteristics of Al Ga N-channel metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV / cm at 25 ° C and 1.06 MV / cm at 300 ° C, which are almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyzes suggest that the proposed device suffers from smaller current collapse when the temperature reaches reaches as high as 300 ° C.