介绍了一种利用盐酸、磷酸混合液对不同Al组分(AlxGa1-x)0.5In0.5P的选择性腐蚀特性对倒装AlGaInP红光LED进行表面粗化的方法。通过向粗化层GaInP加入适量的Al,在Al组分为0.4时,利用体积比为1∶10的HCl∶H3PO4可以得到横向尺寸约为60nm,纵向尺寸约为150nm的最有利于出光的类三角圆锥型表面结构。器件测试结果表明,在20mA注入电流下,器件外量子效率比粗化前提高了80%。 A method for surface roughening AlGaInP red LED by selective etching of different Al composition (AlxGa1-x) 0.5In0.5P with hydrochloric acid and phosphoric acid was introduced. By adding an appropriate amount of Al into the roughened layer GaInP, when the Al composition is 0.4, using HCl: H 3 PO 4 in a volume ratio of 1:10, the most favorable light-emitting species with a horizontal size of about 60 nm and a vertical size of about 150 nm can be obtained Triangular conical surface structure. The device test results show that the external quantum efficiency of the device is increased by 80% compared with that before roughening at 20mA injection current.