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本文以简单的金催化常压化学气相沉积法,在单晶硅片上合成了塔状锗纳米结构(简称锗纳米塔).这种锗纳米塔的横截面为准六边形,从底端至顶端的尺寸逐渐减小,侧面含有锯齿状边缘.研究表明,锗纳米塔的形成主要是由相互竞争的生长过程决定的:在化学气相沉积过程中,由反应物蒸汽压调控的金催化的轴向生长与径向生长之间的竞争.这种生长动力学与产物复杂形貌之间的关系可以通过不同沉积区域获得的圆柱状、圆锥状锗纳米线以及念珠状、六角锥状锗纳米塔得到验证.这种锗纳米塔不仅丰富了锗纳米结构家族,而且在锗基功能纳米器件中有潜在的应用前景.
In this paper, a simple gold-catalyzed atmospheric pressure chemical vapor deposition method, synthesized in the silicon wafer tower germanium nanostructures (referred to as germanium nano-tower) .The germanium nano-tower cross-section of the quasi-hexagonal, from the bottom The size of the top of the germanium nanotubes is gradually reduced, and the jagged edges of the sides of the germanium nanotubes are formed. The results show that the formation of germanium nanodisks is mainly determined by the competing growth processes: during the chemical vapor deposition, the gold catalyzed by the vapor pressure of the reactants Axial growth and radial growth competition between this growth kinetics and the relationship between the complex morphology of the product can be obtained through different deposition area of cylindrical, conical germanium nanowires and beaded, hexagonal conical germanium nano This germanium nanopattern not only enriches the family of germanium nanostructures, but also has potential applications in germanium-based functional nanodevices.