利用单层六方BN材料(hexagonal BN:hBN)作为成核层,用金属有机物化学气相沉积法生长AlN薄膜,得到应力小裂纹少的外延材料。实验中,对hBN材料进行人为表面化学修饰,以增加hBN的缺陷和后续AlN生长的成核中心。对比分析了有无hBN成核层时生长的AlN薄膜质量,证实了hBN有助于减少AlN外延层中的裂纹,空气孔隙及应力。研究了V/III生长参数对AlN薄膜表面形貌、晶体质量和应力的影响,得到合适的生长窗口,获得完全无应力的氮化铝外延层,且其位错密度与蓝宝石上生长的氮化铝相当. Using a hexagonal BN (hBN) as a nucleation layer, an AlN thin film was grown by a metal-organic chemical vapor deposition method to obtain an epitaxial material with small stress cracks. In experiments, humanized surface chemistry of hBN materials was modified to increase the defects of hBN and nucleation centers for subsequent AlN growth. The quality of AlN thin films grown with and without hBN nucleation layer was compared and analyzed. It was confirmed that hBN can help reduce the cracks, air pores and stress in the AlN epitaxial layer. The effect of V / III growth parameters on the surface morphology, crystal quality and stress of AlN thin films was investigated. A suitable growth window was obtained to obtain a completely stress-free aluminum nitride epitaxial layer. The dislocation density was related to the growth of nitrides Al quite.