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根据红外辐射理论和薄膜光学原理计算了高品质ITO(indiumtinoxide)导电膜的红外发射率,其理论曲线与实测曲线基本符合.并得出方块电阻小于30Ω时,ITO膜在红外波段8—14μm的平均红外发射率理论值小于0.1.实际制备方块电阻小于10Ω的ITO膜具有优良的红外隐身性能.讨论了高品质ITO膜具有低红外发射率的物理机理,并提出了低红外发射率临界方块电阻值,这有利於理论研究和工艺制备红外隐身ITO膜.
The infrared emissivity of high quality ITO (indiumtinoxide) conductive film was calculated according to infrared radiation theory and thin film optics theory, and its theoretical curve was in good agreement with the measured curve.It was found that when the sheet resistance is less than 30Ω, the ITO film has an infrared transmittance of 8-14μm The theoretical value of the average infrared emissivity is less than 0.1.The practical preparation of ITO film with a sheet resistance of less than 10Ω has excellent infrared stealth performance.The physical mechanism of high quality ITO film with low infrared emissivity is discussed and the critical sheet resistance of low infrared emissivity Value, which is conducive to the theoretical research and fabrication of IR stealth ITO films.