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本文报导了由40-MeV质子辐照诱发16位NMOS微处理机单击事件扰动的调查情况,并将这项研究所获得的结果和先前平均能量为14MeV的中子束引起的扰动率的结果进行了比较。调查的微处理机是MC68000和不同型号的Z8002及AMZ8002。每次扰动的质子流量范围是2×10~9～4×10~(10)质子/cm~2,它与器件的型号有关.器件发生失效时的质子束总剂量为3.2×10~(10)～1.7×10~(11)质子/cm~2,对应的总剂量是6.0～32.2升拉德(硅),也是与器件型号有关。每次扰动的典型质子流量比过去测量的同样引起扰动的中子流量要低将近一个数量级,就是说器件对于40MeV的质子扰动比14MeV的中子扰动更敏感。此外,某些微处理机对辐照扰动的敏感程度取决于器件在此之前所经受过的辐照剂量有关。还发现相同类型的微处理机,因其型号不同,每次扰动时的质子流量和引起失效的剂量也差异悬殊。这个有限的调查还表明了扰动率和质子通量之间的依赖关系并不明显。
This paper reports the investigation of click event perturbations induced by 40-MeV proton irradiation in 16-bit NMOS microprocessors and compares the results obtained in this study with the perturbations caused by neutron beams with an average energy of 14 MeV Compared. The microprocessors investigated were the MC68000 and different models of the Z8002 and AMZ8002. The proton flux per perturbation is in the range of 2 × 10 ~ 9 ~ 4 × 10 ~ (10) proton / cm ~ 2, which is related to the type of the device.The total dose of proton beam in the event of device failure is 3.2 × 10 ~ (10) ) ~ 1.7 × 10 ~ (11) proton / cm ~ 2, corresponding to a total dose of 6.0 ~ 32.2 liters (Si), also related to the device model. The typical proton flux for each perturbation is nearly an order of magnitude lower than the perturbed neutron flux measured in the past, which means that the proton perturbation at 40 MeV is more sensitive than the 14MeV neutron perturbation. In addition, the sensitivity of some microprocessors to radiated disturbances depends on the amount of radiation the device has been exposed to before. Also found that the same type of microprocessors, because of their different models, each disturbance of the proton flux and the dose caused the difference is also very different. This limited survey also shows that the dependency between the disturbance rate and the proton flux is not obvious.