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SOI(silicononinsulator ,绝缘层上的硅 )技术和SiGe(silicongermanium ,锗硅 )技术都是微电子领域的前沿技术 .SiGe-OI(SiGe -on -insulator ,绝缘层上的锗硅 )新型材料是最近几年来才出现的一种新型SOI材料 ,它同时具备了SOI技术和SiGe技术的优势 ,因而成为当前微电子研究领域的最前沿课题之一 .文章结合中国科学院上海微系统与信息技术研究所的工作 ,综述了SiGe-OI材料研究情况和应用前景 ,详细介绍了其主要的制备方法 ,最后报道了作者在SiGe -OI材料研究上的一些实验结果 .
Silicon-on-insulator (SOI) technology and silicon germanium (SiGe) technology are among the leading technologies in the field of microelectronics.GeSi-OI (SiGe-on-insulator) A new type of SOI material that has emerged in recent years has the advantages of both SOI and SiGe technologies and has become one of the most advanced topics in the field of microelectronics research at present. Combining with the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences In this paper, the research situation and application prospect of SiGe-OI materials are reviewed. The main preparation methods of SiGe-OI materials are introduced. Finally, some experimental results of SiGe-OI materials are reported.