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源于其高电荷迁移率,III-V族半导体材料有望在10nm技术节点以下的低功耗晶体管上得到采用。采用角分辨X射线光电子能谱(ARXPS),表征了InP/Al_2O_3堆栈退火前后的界面化学,元素扩散与脱吸附。InP/Al_2O_3堆栈在退火前后均存在In氧化物,在退火温度增加到500℃时In氧化物有脱吸附现象。在500℃退火后,P氧化物的扩散现象被角分辨XPS观察到。界面元素扩散和脱吸附会大大影响界面态密度及器件的电学性能,并直接影响其稳定性和可靠性。本文显示InP器件在制造过程中应该进行有效的界面钝化,避免高温工艺。
Due to their high charge mobility, group III-V semiconductors are expected to be used on low power transistors below the 10nm technology node. The angular resolution X-ray photoelectron spectroscopy (ARXPS) was used to characterize the interfacial chemistry, elemental diffusion and desorption before and after InP / Al_2O_3 stack annealing. The InP / Al 2 O 3 stack had both In oxides before and after annealing, and the In oxides desorbed when the annealing temperature was increased to 500 ℃. The diffusion of P-oxide was observed by angle-resolved XPS after annealing at 500 ° C. Diffusion and desorption of interface elements greatly affect the density of interface states and the electrical properties of the devices and directly affect their stability and reliability. This article shows that InP devices should be passivated effectively during manufacturing to avoid high temperature processes.