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提出一种具有非均匀交叉分布P柱区(NCDP)的新型超结(SJ)LDMOS,NCDP SJ由一排嵌入在N漂移区的P柱区组成。该超结结构通过减少P区电荷来确保漂移区电荷平衡并且抑制了衬底辅助耗尽(SAD)效应,使得漂移区有均匀电场,器件获得一个高的击穿电压(BV)。另外,由于交叉分布的P柱区被N型区域包围着,目前工艺技术导致的电荷掺杂轻微不平衡对器件的性能影响在文中研究的结构中相对更小。仿真结果表明文中提出的漂移区为15μm的器件耐压达到22V/μm,相比于常规超结(CSJ)LDMOS提高了100%,击穿电压达到330V。
A new type of super-junction (SJ) LDMOS with non-uniform cross-distributed P-pillar region (NCDP) is proposed. NCDP SJ consists of a row of P-pillar regions embedded in N-drift region. The super junction structure ensures charge balance in the drift region and suppresses the substrate assisted depletion (SAD) effect by reducing the P-region charge, resulting in a uniform electric field in the drift region, resulting in a device with a high breakdown voltage (BV). In addition, since the cross-distributed P-pillar region is surrounded by the N-type region, the slight influence of the current process technology on the performance of the device caused by slight charge doping imbalance is relatively small in the structure studied in the article. The simulation results show that the voltage drop of the device with 15μm drift region is 22V / μm, which is 100% higher than that of the conventional super junction (CSJ) LDMOS and the breakdown voltage reaches 330V.