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制备包含α-Fe2O3与SnO2的双层气敏薄膜,研究发现:Ar+刻蚀可同时除去薄膜表面的物理吸附氧和化学吸附氧,剩下晶格氧,因而O1s的XPS谱图变得对称.
The results show that the XPS spectrum of O1s becomes symmetrical when Ar + etching removes both physically adsorbed oxygen and chemisorbed oxygen and leaves the lattice oxygen behind.