论文部分内容阅读
基于深亚微米CMOS工艺对粒子探测器读出电荷灵敏放大器电路的噪声进行了优化,计算了输入管的所有有关的噪声并考虑了非输入管噪声及稳定性影响输入的因素,提出了一种更精确的电路噪声模型,可在现有的EKV模型应用基础上,对MOS管的各个工作区完成解析计算且是连续的,用以优化输入管的尺寸和工作点,给出输入管的栅极电容的优值的匹配条件,方便于分析和设计。在0.18μm CMOS工艺下对模型进行比较实验验证,表明计算精度比用传统方法有较明显优势。
Based on the deep submicron CMOS process, the noise of the charge detector circuit of the particle detector is optimized. All the relevant noise of the input tube is calculated and the factors that affect the input noise and stability of the input tube are considered. More accurate circuit noise model can be based on the application of the existing EKV model, the work area of the MOS tube to complete the analytical calculation is continuous, to optimize the size of the input pipe and the operating point, gives the input pipe gate Excellent value of the pole of the matching conditions, easy to analyze and design. In the 0.18μm CMOS process comparison of the experimental model, indicating that the calculation accuracy than the traditional method has obvious advantages.