ZnO作为重要的第三代半导体材料在光电领域具有广泛的应用前景因而引起越来越多的关注,ZnO薄膜的p型掺杂是实现ZnO基光电器件的关键,也是ZnO材料的主要研究课题。本文论述了ZnO薄膜p型转变的难点及其解决方法,概述了ZnO薄膜p型掺杂的研究现状,提出了有待进一步研究的问题。 ZnO as an important third-generation semiconductor material in the field of optoelectronics has a wide range of applications and therefore attracted more and more attention. ZnO thin-film p-type doping is the key to achieve ZnO-based optoelectronic devices, ZnO materials is also the main research topic. This paper discusses the difficulties and solutions of the p-type transition of ZnO thin films. The research status of p-type doping of ZnO thin films is summarized and some problems to be further studied are put forward.