专利号:美国4184078,发明者:David J.nagel等,申请日期:1978年8月15日.内容提要:本文介绍在真空系统中产生高温等离子体,并从该等离子体中发射出软X射线的X射线曝光方法和手段。X射线穿透掩膜,曝光衬底上的X射线抗蚀剂,在衬底上产生出理想的图象。X射线的能谱为1～5Kev。这种X射线穿过掩膜支持层,在有图形材料的地方,被金吸收,在没有图形的地方被X射线抗蚀剂适当地吸收。由于能量很少会超过5Kev,因此,由X射线引起的衬底损伤也小。 Patent No. 4184078, Inventor: David J.nagel, et al., Filed August 15, 1978. Abstract: This article describes the generation of high temperature plasma in a vacuum system and the emission of soft X-rays from the plasma X-ray exposure method and means. X-rays penetrate the mask and expose the X-ray resist on the substrate to produce the desired image on the substrate. The X-ray spectrum is 1 ~ 5Kev. This X-ray passes through the mask support layer, where there is a patterned material, is absorbed by the gold and properly absorbed by the X-ray resist where there is no pattern. Since the energy rarely exceeds 5 Kev, the substrate damage due to X-rays is also small.