0引言随着电子器件的发展，IC集成度越来越高，按等比例缩小的原则，线条越来越细，电子器件互连金属薄膜的线条所承受的电流密度就越来越大，金属薄膜的电迁移失效又成为WHI迫切需要解决的问题之一。为控制和减少由于电流密度增加造成的电迁移失效现象，增加导电薄膜的载流容? 0 Introduction With the development of electronic devices, IC integration is higher and higher, according to the principle of scaling down, the lines are getting thinner and thinner, the electronic current density of metal film interconnection metal film is more and more withstand, the metal The electromigration failure of the thin film has become one of the problems that WHI urgently needs to solve. To control and reduce electromigration failure due to increased current densities, increase the current carrying capacity of the conductive film?