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磷化铟具有三能谷的电子渡越机构,预期用作微波振荡器和放大器比砷化镓材料好,国外已制成了器件。我们在具有水平区熔生长的掺铬磷化铟单晶的条件下,开展了气相外延研制工作,在国内首先制出了磷化铟外延片。目前,外延层厚度有10微米,载流子浓度为
Indium phosphide has a three-energy valley electronic transit mechanism is expected to be used as a microwave oscillator and amplifier GaAs than GaAs material, has been made abroad devices. We developed the vapor phase epitaxy under the conditions of indium-doped indium single crystal doped with chromium in the horizontal region, and fabricated indium phosphide epitaxial wafer in China at first. At present, the epitaxial layer thickness of 10 microns, the carrier concentration is