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研究了常压MOCVD方法生长在GaAs(100)衬底上的ZnTe-ZnS应变超晶格光学性质。在77K温度下观测到了与载流子有关的带间跃迁复合。随着激发密度增加,高能子能带上的载流子参与发光过程增强。通过Kroing-Penney模型计算了ZnTe-ZnS应变超晶格的能带结构,并拟合实验结果解释了发光的起因。
The optical properties of ZnTe-ZnS strained superlattices grown on GaAs (100) substrates by atmospheric pressure MOCVD were investigated. Carrier-dependent transition-band recombination was observed at 77K. As the excitation density increases, carriers on the high-energy bandgap participate in the luminescence enhancement. The band structure of the ZnTe-ZnS strained superlattice was calculated by Kroing-Penney model and the experimental results explained the origin of the luminescence.