论文部分内容阅读
直拉硅单晶中新施主(ND)的形成不仅依赖于其氧含量,而且为碳的存在所促进;此外,原生晶体中的微缺陷也起非常重要的作用。我们求出的新施主能级分别为 E_(ND)(Ⅰ)=50±5meV,E_(ND)(Ⅱ)=100±10meV(对于 P 型单晶)以及 E_(ND)(Ⅲ)=25meV(对于 N 型单晶)。
The formation of a new donor (ND) in Czochralski silicon depends not only on its oxygen content, but also on the presence of carbon; in addition, microdefects in primary crystals also play a very important role. The new donor energy levels we obtained are E_ (ND) (I) = 50 ± 5meV, E_ (ND) (II) = 100 ± 10meV for P-type single crystal and E_ (ND) (For N type single crystal).