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InAs/GaSb SLs探测器台面刻蚀常用的工艺有干法刻蚀和湿法刻蚀。研究了三种等离子刻蚀气体(Cl2基,Ar基和CH4基)对超晶格的刻蚀效果,SEM结果表明,CH4基组分能够得到更加平整的表面形貌和更少的腐蚀坑;之后采用湿法腐蚀工艺,用于消除干法刻蚀带来的刻蚀损伤,分别研究了酒石酸系和磷酸系两种腐蚀溶液的去损伤效果,结果表明,磷酸系腐蚀液的去损伤效果更好,且腐蚀速率更加稳定。采用优化的台面工艺制备了InAs/GaSb SLs探测器,其I-V特性曲线表明二极管具有较低的暗电流,其77 K时动态阻抗R0A=1.98×104Ωcm2。
InAs / GaSb SLs detector mesa etching process commonly used dry etching and wet etching. The etching effects of three kinds of plasma etching gases (Cl2, Ar and CH4) on the superlattices were studied. The SEM results show that the CH4 - based composition can obtain a smoother surface morphology and fewer corrosion pits. After the wet etching process was used to eliminate the etching damage caused by the dry etching, the tartaric acid and phosphoric acid etching solutions were respectively studied for the demage effect. The results showed that the de-damaging effect of the phosphoric acid-based etching solution was more Well, and the corrosion rate is more stable. The InAs / GaSb SLs detector was fabricated by the optimized mesa technology. The I-V characteristic curve shows that the diode has a low dark current, and its dynamic impedance R0A = 1.98 × 104Ωcm2 at 77K.