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在有效质量近似下,利用变分法研究了在GaAs半导体量子箱中电子能量的斯塔克效应.结论表明:电场平行于量子箱的中心轴时,斯塔克能移只与量子箱高度有关;电场垂直于中心轴时,斯塔克能移仅仅与它的截面尺寸有关.当电场方向与中心轴夹角为任意角时,斯塔克能移与高度和截面都有关.同时在低场和高场极限下,理论上分析了电场大小和量箱尺寸对斯塔克能移的影响.
The Stark effect of electron energy in a GaAs semiconductor quantum box is studied by using the variational method under the approximation of effective mass.The results show that the Stark shift is only related to the height of the quantum box when the electric field is parallel to the central axis of the quantum box ; When the electric field is perpendicular to the central axis, the Stark shift is only related to its cross section size. When the angle between the electric field direction and the central axis is an arbitrary angle, the Stark shift is related to both the height and the cross section. Meanwhile, And the high field limit, the effect of the electric field size and the size of the measuring box on the Stark shift is theoretically analyzed.